IEEE - Institute of Electrical and Electronics Engineers, Inc. - Enhanced PMOS NBTI degradation due to halo implant channeling

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): D. Brisbin ; J. Yang ; S. Bahl ; C. Parker
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 61 - 66
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558864
Regular:

NBTI is a serious reliability concern in state of the art PMOSFET devices. The implementation of nitrided gate oxides to prevent boron penetration has aggravated the NBTI issue. Because of... View More

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