IEEE - Institute of Electrical and Electronics Engineers, Inc. - Bit error rate in NAND Flash memories

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): N. Mielke ; T. Marquart ; Ning Wu ; J. Kessenich ; H. Belgal ; E. Schares ; F. Trivedi ; E. Goodness ; L.R. Nevill
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 9 - 19
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558857
Regular:

NAND flash memories have bit errors that are corrected by error-correction codes (ECC). We present raw error data from multi-level-cell devices from four manufacturers, identify the root-cause... View More

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