IEEE - Institute of Electrical and Electronics Engineers, Inc. - Development of a new high holding voltage SCR-based ESD protection structure

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): G. Meneghesso ; A. Tazzoli ; F.A. Marino ; M. Cordoni ; P. Colombo
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 3 - 8
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558856
Regular:

A new silicon controlled rectifier low voltage triggered (SCR-LVT), to be adopted as protection structure against electrostatic discharge (ESD) events, has been developed and characterized. A high... View More

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