IEEE - Institute of Electrical and Electronics Engineers, Inc. - Self-aligned n-shaped source/drain ultra-thin SOI MOSFETs

2008 26th International Conference on Microelectronics

Author(s): Yi-Chuen Eng ; Jyi-Tsong Lin ; Po-Hsieh Lin ; Hau-Yuan Huang ; Shiang-Shi Kang ; Kung-Kai Kao ; Jeng-Da Lin ; Yi-Ming Tseng ; Ying-Chieh Tsai
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2008
Conference Location: Nis, Serbia & Montenegro
Conference Date: 11 May 2008
Page(s): 485 - 488
ISBN (CD): 978-1-4244-1882-4
ISBN (Paper): 978-1-4244-1881-7
DOI: 10.1109/ICMEL.2008.4559327
Regular:

What is silicon-on-insulator (SOI)? Why SOI? Because of the excellent short-channel effects (SCEs) immunity, SOI group is generally considered to be a very strong candidate in the end of... View More

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