IEEE - Institute of Electrical and Electronics Engineers, Inc. - A fast 16K static RAM built with a silicide enhanced NMOS process

Author(s): B.A. Frederick
Sponsor(s): IEEE Solid-State Circuits Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 1983
Volume: 18
Page(s): 612 - 614
ISSN (Paper): 0018-9200
ISSN (Online): 1558-173X
DOI: 10.1109/JSSC.1983.1052003
Regular:

A 25-ns 16K RAM is described which uses internal asynchronous precharging, a unique column buffer, and latching data lines. The NMOS technology features are 1.3 /spl mu/ L/SUB eff/, molybdenum... View More

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