IEEE - Institute of Electrical and Electronics Engineers, Inc. - A low-leakage current power 180-nm CMOS SRAM

13th Asia and South Pacific Design Automation Conference ASP-DAC 2008

Author(s): T. Enomoto ; Y. Higuchi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2008
Conference Location: Seoul, South Korea
Conference Date: 21 March 2008
Page(s): 101 - 102
ISBN (CD): 978-1-4244-1922-7
ISBN (Paper): 978-1-4244-1921-0
DOI: 10.1109/ASPDAC.2008.4483914
Regular:

A low leakage power, 180-nm 1K-b SRAM was fabricated. The stand-by leakage power of a 1K-bit memory cell array incorporating a newly-developed leakage current reduction circuit called a... View More

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