IEEE - Institute of Electrical and Electronics Engineers, Inc. - Compact FinFET Memory Circuits with P-Type Data Access Transistors for Low Leakage and Robust Operation

2008 9th International Symposium on Quality Electronic Design (ISQED '08)

Author(s): S.A. Tawfik ; V. Kursun
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2008
Conference Location: San Jose, CA, USA
Conference Date: 17 March 2008
Page(s): 855 - 860
ISBN (Paper): 978-0-7695-3117-5
DOI: 10.1109/ISQED.2008.4479850
Regular:

A new six transistor (6 T) SRAM cell with PMOS access transistors is proposed in this paper for reducing the leakage power consumption while enhancing the data stability and the integration... View More

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