IEEE - Institute of Electrical and Electronics Engineers, Inc. - Statistical Evaluation of Split Gate Opportunities for Improved 8T/6T Column-Decoupled SRAM Cell Yield

2008 9th International Symposium on Quality Electronic Design (ISQED '08)

Author(s): R. Kanj ; R. Joshi ; Keunwoo-Kim ; R. Williams ; S. Nassif
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2008
Conference Location: San Jose, CA, USA
Conference Date: 17 March 2008
Page(s): 702 - 707
ISBN (Paper): 978-0-7695-3117-5
DOI: 10.1109/ISQED.2008.4479823
Regular:

We study the yield improvements of mixed/split gate designs in 45 nm FinFET technology. The original contributions of this paper are: fast statistical analysis for FinFET designs including 6T and... View More

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