IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure

2008 9th International Symposium on Quality Electronic Design (ISQED '08)

Author(s): Yue Fu ; Jin He ; Feng Liu ; Jie Feng ; Chenyue Ma ; Lining Zhang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2008
Conference Location: San Jose, CA, USA
Conference Date: 17 March 2008
Page(s): 531 - 536
ISBN (Paper): 978-0-7695-3117-5
DOI: 10.1109/ISQED.2008.4479791
Regular:

This paper investigates the transport properties of the silicon-germanium nanowire MOSFETs with core-shell structure by using a finite element numerical method for electronic structure, energy... View More

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