IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fundamental Data Retention Limits in SRAM Standby Experimental Results

2008 9th International Symposium on Quality Electronic Design (ISQED '08)

Author(s): A. Kumar ; Huifang Qin ; P. Ishwar ; J. Rabaey ; K. Ramchandran
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2008
Conference Location: San Jose, CA, USA
Conference Date: 17 March 2008
Page(s): 92 - 97
ISBN (Paper): 978-0-7695-3117-5
DOI: 10.1109/ISQED.2008.4479705
Regular:

SRAM leakage power dominates the total power of low duty-cycle applications, e.g., sensor nodes. Accordingly, leakage power reduction during data-retention in SRAM standby is often addressed by... View More

Advertisement