IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study of GaAs nanowire electronic devices by using Monte Carlo method

3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Author(s): Ying Shen ; Hang Guo
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2008
Conference Location: Sanya, China
Conference Date: 6 January 2008
Page(s): 1,108 - 1,112
ISBN (CD): 978-1-4244-1908-1
ISBN (Paper): 978-1-4244-1907-4
DOI: 10.1109/NEMS.2008.4484512
Regular:

In this paper, we study electrical properties and performance of GaAs nanowire electronic devices by using Monte Carlo method. Instead of quasi 1-D or 1-D configurations, the GaAs nanowire is... View More

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