IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of ion implantation on dielectric charging in PECVD silicon nitride films for RF MEMS switches application

3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Author(s): Gang Li ; Linxian Zhan ; Haisheng San ; Peng Xu ; Xuyuan Chen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2008
Conference Location: Sanya, China
Conference Date: 6 January 2008
Page(s): 1,015 - 1,019
ISBN (CD): 978-1-4244-1908-1
ISBN (Paper): 978-1-4244-1907-4
DOI: 10.1109/NEMS.2008.4484493
Regular:

In this work phosphorus or boron ions were implanted into dielectric layer by ion implantation. The impurity energy levels are introduced into the band gap of dielectric layer, thus the scattering... View More

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