IEEE - Institute of Electrical and Electronics Engineers, Inc. - InGaN/GaN multiple quantum wells with silicon delta doping in GaN barriers for light-emitting diodes

3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Author(s): G.M. Wu ; T.J. Chung ; T.E. Nee ; J.C. Wang ; H.C. Lu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2008
Conference Location: Sanya, China
Conference Date: 6 January 2008
Page(s): 596 - 599
ISBN (CD): 978-1-4244-1908-1
ISBN (Paper): 978-1-4244-1907-4
DOI: 10.1109/NEMS.2008.4484403
Regular:

In this paper, silicon delta doping was incorporated in the GaN barriers of InGaN/GaN multiple quantum well (MQW) structures for blue light-emitting diodes. High-order satellite peaks from X-ray... View More

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