IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electric properties depending on temperature in SiOC dielectric layer

3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Author(s): Teresa Oh
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2008
Conference Location: Sanya, China
Conference Date: 6 January 2008
Page(s): 552 - 556
ISBN (CD): 978-1-4244-1908-1
ISBN (Paper): 978-1-4244-1907-4
DOI: 10.1109/NEMS.2008.4484393
Regular:

The SiOC films by chemical vapor deposition have been researched the electrical properties by leakage current. The chemical properties of SiOC film was divided into organic, hybrid and inorganic... View More

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