IEEE - Institute of Electrical and Electronics Engineers, Inc. - Unipolar Schottky-Ohmic carbon nanotube field effect transistor

3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Author(s): Z. Kordrostami ; I. Hassaninia ; M.H. Sheikhi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2008
Conference Location: Sanya, China
Conference Date: 6 January 2008
Page(s): 529 - 531
ISBN (CD): 978-1-4244-1908-1
ISBN (Paper): 978-1-4244-1907-4
DOI: 10.1109/NEMS.2008.4484387
Regular:

A new structure for carbon nanotube field effect transistors (CNTFETs) is proposed and its current-voltage characteristic is simulated. The terminals of the transistor channel which is a... View More

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