IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study on hall effect of SOI MAG-MOSFET formed by nano-polysilicon films

3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Author(s): Dianzhong Wen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2008
Conference Location: Sanya, China
Conference Date: 6 January 2008
Page(s): 51 - 54
ISBN (CD): 978-1-4244-1908-1
ISBN (Paper): 978-1-4244-1907-4
DOI: 10.1109/NEMS.2008.4484284
Regular:

The hetero-junction source and drain of SOI MAG-MOSFET of n-type nano-polycrystalline silicon films on p-type crystalline silicon were fabricated and the Hall effect was studies. The... View More

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