IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of Insulator Thickness on the Sensing Properties of MISiC Schottky-Diode Hydrogen Sensor

2008 4th IEEE International Symposium on Electronic Design, Test and Applications (DELTA '08)

Author(s): W.M. Tang ; C.H. Leung ; P.T. Lai
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2008
Conference Location: Hong Kong, China
Conference Date: 23 January 2008
Page(s): 171 - 174
ISBN (Paper): 978-0-7695-3110-6
DOI: 10.1109/DELTA.2008.28
Regular:

Silicon dioxide deposited by RF sputtering is used as the gate insulator of Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensors. Sensors with different gate insulator thicknesses are... View More

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