IEEE - Institute of Electrical and Electronics Engineers, Inc. - An X-band 250W solid-state power amplifier using GaN power HEMTs

2008 IEEE Radio and Wireless Symposium (RWS '08)

Author(s): K. Kanto ; A. Satomi ; Y. Asahi ; Y. Kashiwabara ; K. Matsushita ; K. Takagi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2008
Conference Location: Orlando, FL, USA
Conference Date: 22 January 2008
Page(s): 77 - 80
ISBN (CD): 978-1-4244-1463-5
ISBN (Paper): 978-1-4244-1462-8
DOI: 10.1109/RWS.2008.4463432
Regular:

More than 250 W of peak output power (pulse width 64 mus, duty cycle 7%) is achieved with newly developed X-band solid-state power amplifier. The final stage of the SSPA consists of four 80 W... View More

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