IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-Voltage HBTs Compatible with High-Speed SiGe BiCMOS Technology

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Author(s): B. Geynet ; P. Chevalier ; S. Chouteau ; G. Avenier ; T. Schwartzmann ; D. Gloria ; G. Dambrine ; F. Danneville ; A. Chantre
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2008
Conference Location: Orlando, FL, USA
Conference Date: 23 January 2008
Page(s): 210 - 213
ISBN (CD): 978-1-4244-1856-5
ISBN (Paper): 978-1-4244-1855-8
DOI: 10.1109/SMIC.2008.59
Regular:

This paper describes the integration of high-voltage HBTs in a high-speed SiGe BiCMOS technology. HBTs with BVCEO from 2 V to 5 V featuring an all-implanted collector and fully... View More

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