IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improved Compact Model for High Speed SiGe HBT Breakdown

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Author(s): Hongya Xu ; E. Kasper
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2008
Conference Location: Orlando, FL, USA
Conference Date: 23 January 2008
Page(s): 203 - 205
ISBN (CD): 978-1-4244-1856-5
ISBN (Paper): 978-1-4244-1855-8
DOI: 10.1109/SMIC.2008.57
Regular:

High speed SiGe-HBTs provide only a small VCE voltage variation between the saturation region (low VCE) and the breakdown at also rather low values. For high speed circuits... View More

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