IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Compact Low-Power SiGe:C BiCMOS Amplifier for 77-81 GHz Automotive Radar

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Author(s): B. Schleicher ; S. Chartier ; G. Fischer ; F. Korndorfer ; J. Borngraber ; T. Feger ; H. Schumacher
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2008
Conference Location: Orlando, FL, USA
Conference Date: 23 January 2008
Page(s): 195 - 198
ISBN (CD): 978-1-4244-1856-5
ISBN (Paper): 978-1-4244-1855-8
DOI: 10.1109/SMIC.2008.55
Regular:

In this paper a single-ended fully integrated Si/SiGe HBT amplifier working at a center frequency of 79 GHz is presented. The amplifier consists of three cascode stages. A trimmable line technique... View More

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