IEEE - Institute of Electrical and Electronics Engineers, Inc. - Thick-Gate-Oxide MOS Structures with Sub-Design-Rule (SDR) Polysilicon Lengths for RF Circuit Applications

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Author(s): Haifeng Xu ; K.K. O
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2008
Conference Location: Orlando, FL, USA
Conference Date: 23 January 2008
Page(s): 187 - 190
ISBN (CD): 978-1-4244-1856-5
ISBN (Paper): 978-1-4244-1855-8
DOI: 10.1109/SMIC.2008.53
Regular:

Use of sub-design-rule (SDR) thick-gate-oxide MOS structures can significantly improve RF performance. Utilizing 3-stack 3.3-V MOSFET's with an SDR channel length, a 31.3-dBm 900-MHz Bulk CMOS T/R... View More

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