IEEE - Institute of Electrical and Electronics Engineers, Inc. - Avalanche InP/InGaAs heterojunction phototransistor

Author(s): J. Campbell ; A. Dentai ; G. Qua ; J. Ferguson
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 1983
Volume: 19
Page(s): 1,134 - 1,138
ISSN (Paper): 0018-9197
ISSN (Online): 1558-1713
DOI: 10.1109/JQE.1983.1071966
Regular:

We report on the characteristics of an avalanche InP/InGaAs heterojunction phototransistor. Below the turnover voltage, the gain is bias dependent and avalanching can be used to achieve... View More

Advertisement