IEEE - Institute of Electrical and Electronics Engineers, Inc. - A gate drive circuit of power MOSFETs and IGBTs for low switching losses

2007 7th Internatonal Conference on Power Electronics (ICPE)

Author(s): T. Shimizu ; K. Wada
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Daegu, South Korea
Conference Date: 22 October 2007
Page(s): 857 - 860
ISBN (CD): 978-1-4244-1872-5
ISBN (Paper): 978-1-4244-1871-8
DOI: 10.1109/ICPE.2007.4692507
Regular:

In order to increase the power density of power converters, reduction of the switching losses at a high-frequency switching condition is one of the most important issues. This paper presents a new... View More

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