IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication of 4H-SiC Schottky barrier diodes with the epilayer grown by Bis-trimethylsilylmethane precursor

2007 7th Internatonal Conference on Power Electronics (ICPE)

Author(s): Myeong Sook Oh ; Ho Keun Song ; Jeong Hyun Moon ; Jeong Hyuk Yim ; Jong Ho Lee ; Han Seok Seo ; Yu Jin Choi ; Hyeong Joon Kim
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Daegu, South Korea
Conference Date: 22 October 2007
Page(s): 229 - 231
ISBN (CD): 978-1-4244-1872-5
ISBN (Paper): 978-1-4244-1871-8
DOI: 10.1109/ICPE.2007.4692382
Regular:

The authors fabricated the 4H-SiC Schottky barrier diodes (SBDs) with the epilayers grown using the MOCVD. Bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) was... View More

Advertisement