IEEE - Institute of Electrical and Electronics Engineers, Inc. - An active gate drive circuit for high power inverter system to reduce turn-off spike voltage of IGBT

2007 7th Internatonal Conference on Power Electronics (ICPE)

Author(s): Jin-Hong Kim ; Dong-Hyun Park ; Jeong-Bin Kim ; Bong-Hyun Kwon
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Daegu, South Korea
Conference Date: 22 October 2007
Page(s): 127 - 131
ISBN (CD): 978-1-4244-1872-5
ISBN (Paper): 978-1-4244-1871-8
DOI: 10.1109/ICPE.2007.4692362
Regular:

This paper presents a new gate drive method for high power IGBT to reduce the turn-off spike voltage which is appeared between collector and emitter. In the power circuit of inverter, there is a... View More

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