IEEE - Institute of Electrical and Electronics Engineers, Inc. - High voltage AlGaN/GaN Schottky barrier diode employing the inductively coupled plasma-chemical vapor deposition SiO 2 passivation

2007 7th Internatonal Conference on Power Electronics (ICPE)

Author(s): Young-Hwan Choi ; Jiyong Lim ; Kyu-Heon Cho ; Min-Koo Han
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Daegu, South Korea
Conference Date: 22 October 2007
Page(s): 71 - 73
ISBN (CD): 978-1-4244-1872-5
ISBN (Paper): 978-1-4244-1871-8
DOI: 10.1109/ICPE.2007.4692351
Regular:

The SiO2 passivation using the inductively coupled plasma-chemical vapor deposition(ICP-CVD) was proposed for the high voltage AlGaN/GaN Schottky barrier diode(SBD). The ICP-CVD is well... View More

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