IEEE - Institute of Electrical and Electronics Engineers, Inc. - The effect of a shielding layer on breakdown voltage in a trench gate IGBT
2007 7th Internatonal Conference on Power Electronics (ICPE)
Author(s): | Jong-Seok Lee ; Ho-Hyun Shin ; Han-Sin Lee ; Man young Sung ; Ey-Goo Kang |
Publisher: | IEEE - Institute of Electrical and Electronics Engineers, Inc. |
Publication Date: | 1 October 2007 |
Conference Location: | Daegu, South Korea |
Conference Date: | 22 October 2007 |
Page(s): | 62 - 65 |
ISBN (CD): | 978-1-4244-1872-5 |
ISBN (Paper): | 978-1-4244-1871-8 |
DOI: | 10.1109/ICPE.2007.4692349 |
Regular:
In this paper we introduced the shielding layer concept in order to alleviate the electric field of concentrated on the trench bottom corner. The shielded trench gate IGBT is a trench gate IGBT... View More