IEEE - Institute of Electrical and Electronics Engineers, Inc. - The effect of a shielding layer on breakdown voltage in a trench gate IGBT

2007 7th Internatonal Conference on Power Electronics (ICPE)

Author(s): Jong-Seok Lee ; Ho-Hyun Shin ; Han-Sin Lee ; Man young Sung ; Ey-Goo Kang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Daegu, South Korea
Conference Date: 22 October 2007
Page(s): 62 - 65
ISBN (CD): 978-1-4244-1872-5
ISBN (Paper): 978-1-4244-1871-8
DOI: 10.1109/ICPE.2007.4692349
Regular:

In this paper we introduced the shielding layer concept in order to alleviate the electric field of concentrated on the trench bottom corner. The shielded trench gate IGBT is a trench gate IGBT... View More

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