IEEE - Institute of Electrical and Electronics Engineers, Inc. - Experimental Validation of a Simple Analytical Model for the Electrical Behaviour of Nanoscale MOSFETs

2007 International Semiconductor Conference, CAS 2007

Author(s): A. Sevcenco ; G. Brezeanu ; M. Badila ; F. Draghici ; I. Rusu ; A. Visoreanu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Sinaia, Romania
Conference Date: 15 October 2007
Volume: 2
Page(s): 551 - 554
ISBN (Paper): 978-1-4244-0847-4
ISSN (Paper): 1545-827X
DOI: 10.1109/SMICND.2007.4519783
Regular:

The validation of a new analytical model for the electrical characteristics of deep submicron MOS transistors is accomplished through theory-experiment comparison in this paper. The model is... View More

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