IEEE - Institute of Electrical and Electronics Engineers, Inc. - Application of a New Body Contact to SOI LDMOSFET Devices, Three-Dimesnional Simulation

2007 International Semiconductor Conference, CAS 2007

Author(s): A. Daghighi ; M.A. Osman
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Sinaia, Romania
Conference Date: 15 October 2007
Volume: 2
Page(s): 529 - 532
ISBN (Paper): 978-1-4244-0847-4
ISSN (Paper): 1545-827X
DOI: 10.1109/SMICND.2007.4519777
Regular:

Application of a new area efficient body contact to LDMOSFET devices in silicon-on-insulator (SOI) material has been investigated using three-dimensional simulation. A comparative study of... View More

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