IEEE - Institute of Electrical and Electronics Engineers, Inc. - Calculation of the Depletion Region Width and Barrier Capacitance of Diffused Semiconductor Junctions with Application to Reach-Through Breakdown Voltage of Semiconductor Devices with Diffused Base

2007 International Semiconductor Conference, CAS 2007

Author(s): M.J. Cristea
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Sinaia, Romania
Conference Date: 15 October 2007
Volume: 2
Page(s): 481 - 484
ISBN (Paper): 978-1-4244-0847-4
ISSN (Paper): 1545-827X
DOI: 10.1109/SMICND.2007.4519765
Regular:

Based on new fundamental equations, the calculation of the depletion region width and barrier capacitance of practical diffused semiconductor junctions was achieved for the first time in this... View More

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