IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modified SOI-MOSFET Structure with Shallows Diffusions

2007 International Semiconductor Conference, CAS 2007

Author(s): C. Ravariu ; A. Rusu ; F. Ravariu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Sinaia, Romania
Conference Date: 15 October 2007
Volume: 2
Page(s): 477 - 480
ISBN (Paper): 978-1-4244-0847-4
ISSN (Paper): 1545-827X
DOI: 10.1109/SMICND.2007.4519764
Regular:

An MOSFET with a piezoelectric layer instead of the gate insulator represents a sensitive device at a mechanical pressure stimulus. If the SOI structure is modified so that significant currents... View More

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