IEEE - Institute of Electrical and Electronics Engineers, Inc. - The Influence of the Wetting Layer Morphology on the Nucleation and the Evolution of InAs/GaAs (001) Quantum Dots

2007 International Semiconductor Conference, CAS 2007

Author(s): O. Bute ; G.V. Cimpoca ; E. Placidi ; F. Arciprete ; F. Patella ; M. Fanfoni ; A. Balzarotti
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Sinaia, Romania
Conference Date: 15 October 2007
Volume: 2
Page(s): 337 - 340
ISBN (Paper): 978-1-4244-0847-4
ISSN (Paper): 1545-827X
DOI: 10.1109/SMICND.2007.4519729
Regular:

We present an impression of the present state of knowledge on the formation, via a modified Stransky-Krastanov growth mode, of InAs quantum dots (QD) on GaAs substrates. In order to fulfil this... View More

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