IEEE - Institute of Electrical and Electronics Engineers, Inc. - Simulation Experiment on 4H-SiC Millimeter-Wave Photo-Illuminated High Power Impatt Oscillator

2007 International Semiconductor Conference, CAS 2007

Author(s): M. Mukherjee ; N. Mazumder ; K. Goswami
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Sinaia, Romania
Conference Date: 15 October 2007
Volume: 1
Page(s): 203 - 206
ISBN (Paper): 978-1-4244-0847-4
ISSN (Paper): 1545-827X
DOI: 10.1109/SMICND.2007.4519681
Regular:

Simulation experiments on Si, InP and wide band gap 4H-SiC based single drift IMPATT diodes operating at Ka-band clearly show the advantage of the SiC material system. RF power of 200 W with... View More

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