IEEE - Institute of Electrical and Electronics Engineers, Inc. - Single Device Logic using 3D Gating of Screen Grid Field Effect Transistors

2007 International Semiconductor Conference, CAS 2007

Author(s): Y. Shadrokh ; K. Fobelets ; J.E. Velazquez-Perez
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Sinaia, Romania
Conference Date: 15 October 2007
Volume: 1
Page(s): 45 - 48
ISBN (Paper): 978-1-4244-0847-4
ISSN (Paper): 1545-827X
DOI: 10.1109/SMICND.2007.4519644
Regular:

The screen grid field effect transistor (SGrFET) is an oxide-gated FET with a novel 3D gating configuration perpendicular to the current flow in the channel. The multiple gate character of the... View More

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