IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects indium impurity on optical gap in Nanolayer In x Ga (1−x) As in The Presence of Spin Orbit Interaction by VCA

2007 Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics (IRMMW-THz)

Author(s): E. Faizabadi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2007
Conference Location: Cardiff, UK
Conference Date: 2 September 2007
Page(s): 1,023 - 1,024
ISBN (CD): 978-1-4244-1439-0
ISBN (Paper): 978-1-4244-1438-3
DOI: 10.1109/ICIMW.2007.4516837
Regular:

We calculate the band structure of the InxGa(1-x) As , in the effective mass approximation (EMA) by using virtual crystal approximation based on an 8-band kp formalism. There... View More

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