IEEE - Institute of Electrical and Electronics Engineers, Inc. - NEP and responsivity of THz zero-bias Schottky diode detectors

2007 Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics (IRMMW-THz)

Author(s): J.L. Hesler ; T.W. Crowe
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2007
Conference Location: Cardiff, UK
Conference Date: 2 September 2007
Page(s): 844 - 845
ISBN (CD): 978-1-4244-1439-0
ISBN (Paper): 978-1-4244-1438-3
DOI: 10.1109/ICIMW.2007.4516758
Regular:

Schottky barrier diodes can be used as direct detectors throughout the millimeter- and submillimeter- wave bands. When the diodes are optimized to have a low forward turn-on voltage, the detectors... View More

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