IEEE - Institute of Electrical and Electronics Engineers, Inc. - A low power, good gain flatness SiGe low noise amplifier for 3.1–10.6GHz ultra wide band radio

2007 50th IEEE International Midwest Symposium on Circuits and Systems (MWSCAS '07)

Author(s): Shih-Chih Chen ; Ruey-Lue Wang ; Cheng-Lung Tsai ; Jui-Hao Shang ; Chien-Hsuan Liu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2007
Conference Location: Montreal, Que., Canada
Conference Date: 5 August 2007
Page(s): 750 - 753
ISBN (CD): 978-1-4244-1176-4
ISBN (Paper): 978-1-4244-1175-7
ISSN (Paper): 1548-3746
DOI: 10.1109/MWSCAS.2007.4488687
Regular:

This paper presents a full band (3.1 GHz to 10.6 GHz) current-reused low noise amplifier (LNA) for ultra wide band (UWB) system based on the TSMC 0.35 m bipolar silicon-germanium (SiGe) processes.... View More

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