IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improved write margin for 90nm SOI-7T-SRAM by look-ahead dynamic threshold voltage control

2007 50th IEEE International Midwest Symposium on Circuits and Systems (MWSCAS '07)

Author(s): M. Iijima ; K. Seto ; M. Numa ; A. Tada ; T. Ipposhi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2007
Conference Location: Montreal, Que., Canada
Conference Date: 5 August 2007
Page(s): 578 - 581
ISBN (CD): 978-1-4244-1176-4
ISBN (Paper): 978-1-4244-1175-7
ISSN (Paper): 1548-3746
DOI: 10.1109/MWSCAS.2007.4488649
Regular:

Instability of SRAM memory cells derived from aggressive technology scaling has recently been one of the most significant issues. Although a 7T-SRAM cell with an area-tolerable separated read port... View More

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