IEEE - Institute of Electrical and Electronics Engineers, Inc. - A novel 8T SRAM cell with improved read-SNM

2007 International IEEE Northeast Workshop on Circuits and Systems (NEWCAS '07)

Author(s): A. Sil ; S. Ghosh ; M. Bayoumi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2007
Conference Location: Montreal, Que, Canada
Conference Date: 5 August 2007
Page(s): 1,289 - 1,292
ISBN (CD): 978-1-4244-1164-1
ISBN (Paper): 978-1-4244-1163-4
DOI: 10.1109/NEWCAS.2007.4488015
Regular:

As the MOSFET's channel length is scaling down, SRAM stability becomes the major concern for future technology. The cell becomes more susceptible to both process induced variation in device... View More

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