IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electron emission properties of silicon field emitter arrays in gaseous ambient for charge compensation device

20th International Vacuum Nanoelectronics Conference

Author(s): M. Takeuchi ; T. Kojima ; A. Oowada ; Y. Gotoh ; M. Nagao ; H. Tsuji ; J. Ishikawa ; S. Sakai ; T. Kimoto
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2007
Conference Location: Chicago, IL, USA
Conference Date: 8 July 2007
Page(s): 145 - 146
ISBN (CD): 978-1-4244-1134-4
ISBN (Paper): 978-1-4244-1133-7
DOI: 10.1109/IVNC.2007.4480971
Regular:

Field emitter arrays made of silicon (Si-FEAs) is a possible candidate for the space charge compensation device during ion implantation process for semiconductor devices, because they are free... View More

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