IEEE - Institute of Electrical and Electronics Engineers, Inc. - Gallium Nitride power HEMT for high switching frequency power electronics

2007 International Workshop on Physics of Semiconductor Devices (IWPSD '07)

Author(s): I. Omura ; W. Saito ; T. Domon ; K. Tsuda
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2007
Conference Location: Mumbai, India
Conference Date: 16 December 2007
Page(s): 781 - 786
ISBN (CD): 978-1-4244-1728-5
ISBN (Paper): 978-1-4244-1727-8
DOI: 10.1109/IWPSD.2007.4472634
Regular:

Very large number of power semiconductor devices (semiconductor power switches) are used in power electronics systems such as AC-DC converter for PCs, DC-DC converters for CPU, motor driver... View More

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