IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comparison of 4H-SiC over wurtzite-GaN for IMPATT applications at 140 GHz

2007 International Workshop on Physics of Semiconductor Devices (IWPSD '07)

Author(s): S.R. Pattanaik ; J. Pradhan ; P.R. Tripathy ; G.N. Dash
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2007
Conference Location: Mumbai, India
Conference Date: 16 December 2007
Page(s): 391
ISBN (CD): 978-1-4244-1728-5
ISBN (Paper): 978-1-4244-1727-8
DOI: 10.1109/IWPSD.2007.4472529
Regular:

Summary form only given. The mm-wave as well as noise properties of IMPATT diode at D-band are efficiently determined with 4H-SiC and GaN as base materials. The results show that SiC IMPATT diode... View More

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