IEEE - Institute of Electrical and Electronics Engineers, Inc. - Mobile space charge effect in 4H Silicon Carbide IMPATT diodes

2007 International Workshop on Physics of Semiconductor Devices (IWPSD '07)

Author(s): S. Mukhopadhyay ; S. Banerjee ; J. Mukhopadhyay ; J.P. Banerjee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2007
Conference Location: Mumbai, India
Conference Date: 16 December 2007
Page(s): 268 - 272
ISBN (CD): 978-1-4244-1728-5
ISBN (Paper): 978-1-4244-1727-8
DOI: 10.1109/IWPSD.2007.4472497
Regular:

The effect of mobile space charge in the depletion layer of 4H SiC p+nn+ IMPATT diode has been investigated through computer simulation method. The simulation is based on... View More

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