IEEE - Institute of Electrical and Electronics Engineers, Inc. - Multiple gate MOSFETs: The road to the future

2007 International Workshop on Physics of Semiconductor Devices (IWPSD '07)

Author(s): A. DasGupta
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2007
Conference Location: Mumbai, India
Conference Date: 16 December 2007
Page(s): 96 - 101
ISBN (CD): 978-1-4244-1728-5
ISBN (Paper): 978-1-4244-1727-8
DOI: 10.1109/IWPSD.2007.4472461
Regular:

The advantages of multiple gate MOSFETs (MuGFETs) are discussed. The interesting concept of operation of a fully depleted single gate SOI MOSFET as a virtual double gate MOSFET is highlighted.... View More

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