IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improvement of electron wavefunction symmetry in InAs/GaAs quantum dots embedded in an InGaAs strain-reducing layer

Microprocesses and Nanotechnology 2007. 20th International Microprocesses and Nanotechnology Conference

Author(s): K. Mukai ; K. Nakashima
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2007
Conference Location: Kyoto, Japan
Conference Date: 5 November 2007
Page(s): 476 - 477
ISBN (Paper): 978-4-9902472-4-9
DOI: 10.1109/IMNC.2007.4456311
Regular:

Summary form only given . Semiconductor quantum dot (QD) devices for the generation of single photon and entangled photon pairs have been eagerly studied for their applications in quantum... View More

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