IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of rate constant for deprotection reaction on latent image formation in chemically amplified EUV resists

Microprocesses and Nanotechnology 2007. 20th International Microprocesses and Nanotechnology Conference

Author(s): T. Kozawa ; S. Tagawa
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2007
Conference Location: Kyoto, Japan
Conference Date: 5 November 2007
Page(s): 438 - 439
ISBN (Paper): 978-4-9902472-4-9
DOI: 10.1109/IMNC.2007.4456292
Regular:

The topography of patterned resist surface such as line edge roughness (LER) or line width roughness (LWR) has become a serious problem in device manufacturing as the minimum feature size is... View More

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