IEEE - Institute of Electrical and Electronics Engineers, Inc. - Environmental-Friendship Etching Process of Low-k SiOCH Films Employing an Alternative Fluorocarbon Gas

Microprocesses and Nanotechnology 2007. 20th International Microprocesses and Nanotechnology Conference

Author(s): E. Shibata ; H. Okamoto ; M. Hori
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2007
Conference Location: Kyoto, Japan
Conference Date: 5 November 2007
Page(s): 252 - 253
ISBN (Paper): 978-4-9902472-4-9
DOI: 10.1109/IMNC.2007.4456199
Regular:

We have proposed a novel etching gas C5F10O of which global warming potential would be less than 50, for the plasma etching of SiOCH. The etching was performed using a dual... View More

Advertisement