IEEE - Institute of Electrical and Electronics Engineers, Inc. - Preliminary Study of Suppression of Backscattering Phenomenon from Drain Region on Double Gate MOSFET's Characteristics

Microprocesses and Nanotechnology 2007. 20th International Microprocesses and Nanotechnology Conference

Author(s): T. Tsutsumi ; K. Tomizawa
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2007
Conference Location: Kyoto, Japan
Conference Date: 5 November 2007
Page(s): 114 - 115
ISBN (Paper): 978-4-9902472-4-9
DOI: 10.1109/IMNC.2007.4456131
Regular:

In this paper, we have proposed a suppression method of a backscattering phenomenon from a drain region of a Double Gate MOSFET (DG-MOSFET), and tried to analyze quantitatively the backscattering... View More

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