IEEE - Institute of Electrical and Electronics Engineers, Inc. - Anisotropic resist reflow process simulation for 32 nm node elongated contact holes

Microprocesses and Nanotechnology 2007. 20th International Microprocesses and Nanotechnology Conference

Author(s): Joon-Min Park ; Dai-Gyoung Kim ; Joo-Yoo Hong ; Hye-Keun Oh
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2007
Conference Location: Kyoto, Japan
Conference Date: 5 November 2007
Page(s): 90 - 91
ISBN (Paper): 978-4-9902472-4-9
DOI: 10.1109/IMNC.2007.4456119
Regular:

In general, it is very hard to correctly predict the elongated contact hole resist reflow process ( CH RRP) due to position shift and pattern size irregularity of RRP, because simple RRP simulator... View More

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